集成电路工艺和版图设计.pptVIP

集成电路工艺和版图设计概述Jian FangIC Design Center, UESTC 微电子制造工艺 N－type Si SiO2 Pwell SiO2 光刻胶 MASK active MASK Active Si3N4 N－type Si SiO2 Pwell SiO2 光刻胶 光刻胶 MASK active MASK Active Si3N4 N－type Si SiO2 Pwell SiO2 光刻胶 光刻胶 Si3N4 N－type Si SiO2 Pwell SiO2 场氧 场氧 场氧 Pwell Si3N4 N－type Si SiO2 Pwell 场氧 场氧 场氧 Pwell N－type Si SiO2 Pwell SiO2 场氧 场氧 场氧 Pwell poly active pwell poly Pwell Active Poly N+ implant P+ implant Omicontact Metal N－type Si SiO2 Pwell SiO2 MASK poly 场氧 场氧 场氧 Pwell poly 光刻胶 N－type Si SiO2 Pwell SiO2 MASK poly 场氧 场氧 场氧 Pwell 光刻胶 poly N－type Si SiO2 Pwell SiO2 场氧 场氧 场氧 Pwell poly N－type Si SiO2 Pwell SiO2 场氧 场氧 场氧 Pwell poly active pwell poly N+ implant Pwell Active Poly N+ implant P+ implant Omicontact Metal N－type Si SiO2 Pwell SiO2 MASK N+ 场氧 场氧 场氧 Pwell poly 光刻胶 N－type Si SiO2 Pwell SiO2 场氧 场氧 场氧 Pwell 光刻胶 poly N+ implant S/D active pwell poly P+ implant Pwell Active Poly N+ implant P+ implant Omicontact Metal N－type Si SiO2 Pwell SiO2 MASK N+ 场氧 场氧 场氧 Pwell poly 光刻胶 光 S/D * IC常用术语 圆片：硅片 芯片(Chip, Die)： 6?、8 ?：硅（园）片直径：1 ?＝25.4mm 6??150mm; 8??200mm; 12??300mm; 亚微米1?m的设计规范 深亚微米=0.5 ?m的设计规范 0.5 ?m 、 0.35 ?m －设计规范（最小特征尺寸） 布线层数：金属（掺杂多晶硅）连线的层数。 集成度：每个芯片上集成的晶体管数 IC工艺常用术语 净化级别：Class 1, Class 10, Class 10,000 每立方米空气中含灰尘的个数 去离子水 氧化 扩散 注入 光刻 ……………. 生产工厂简介 PSI Fab Two was completed January 2, 1996 and is a State of the Art facility. This 2,200 square foot facility was constructed using all the latest materials and technologies. In this set of cleanrooms we change the air 390 times per hour, if you do the math with ULPA filtration this is a Class One facility. We have had it tested and it does meet Class One parameters (without any people working in it). Since we are not making microprocessors here and we dont want to wear space suits, we run it as a class 10 fab. Even though it consistently runs well below Class Ten. 一级净化厂房 Here in the Fab Two Photolithography area we see one of our 200mm .35 micron I-Line Steppers. this stepper can