氧化物纳米线肖特基势垒的传输特性及光电器件研究.doc

氧化物纳米线肖特基势垒的传输特性及光电器件研究 程纲，，* 河南大学特种功能材料教育部重点实验室，， *Email: zld@henu.edu.cn 近年来我们研究了氧化物纳米线肖特基势垒的的电学输运特性，并发展了多种高性能的光电、传感器件。基于到点原子力显微镜，我们发展了一种对纳米线表面态的空间分布状态进行成像的方法，发现了CuO纳米线表面条状分布的表面态[1]。提出了纳米线肖特基势垒的二维势垒结构模型，解释了ZnO纳米线肖特基光电二极管的不饱和光电特性[2]。基于电化学沉积方法，实现了对CuO表面态进行有效调控，并有效控制势垒高度的方法[3]。利用ZnO纳米线肖特基势垒，发展了一种具有高灵敏度和快速回复特性的紫外光传感器，光电流增益大于8000，光电流回复时间常数小于50 ms[4]。利用SnO2纳米线肖特基势垒，发展了一种高灵敏度的气体传感器，在室温下对100 ppm的H2S气体的检测灵敏度大于1200倍。 关键词：氧化物纳米线；肖特基势垒；光电器件 参考文献 [1] Cheng, G.; Wang, S. J.; Cheng, K.; Jiang, X. H.; Wang, L. X.; Li, L. S.; Du, Z. L.; Zou, G. T., Appl Phys Lett 2008, 92(22) :223116. [2] Cheng, G.; Li, Z. H.; Wang, S. J.; Gong, H. C.; Cheng, K.; Jiang, X. H.; Zhou, S. M.; Du, Z. L.; Cui, T.; Zou, G. T., Appl Phys Lett 2008, 93 (12): 123103. [3] Wang, L. X.; Cheng, G.; Jiang, X. H.; Wang, S. J.; Zhang, X. T.; Du, Z. L., Appl Phys Lett 2009, 95 (8): 083107. [4] Cheng, G.; Wu, X. H.; Liu, B.; Li, B.; Zhang, X. T.; Du, Z. L., Appl Phys Lett 2011, 99 (20): 203105. The electrical transport properties and electronic and optoelectronic devices of oxide nanowire Schottky barrier Gang Cheng, Xinghui Wu, Yuntao Li, Bing Li, Zuliang Du* Key Lab for Special Functional Materials, Henan University, Kaifeng, 475004 In recent years, we researched the electrical transport properties of 1-D oxide semiconductor nanostructures, such as ZnO, SnO2, WO3, and CuO et al., and develop some electronic and optoelectronic devices. On the base of conductive atomic force microscopy, an effective method is developed to image the spacial distribution of nanowire surface states[1]. The 2-D geometry structure of Schottky barrier is developed, which can explain the non-saturated photocurrent of ZnO nanowire Schottky barrier photodiode[2]. The effects of surface dangling bonds of CuO nanowire on Schottky barrier are studied, and a passivation method is developed to control barrier height effectively[3]. By using Schottky barrier, some high performance devices have been developed, such as UV detector with high sensi