不同ⅤⅢ族元素比对m面GaN薄膜性能的影响.pdfVIP

第38卷 第1期 电 子 器 件 Vol．38　 No．1 2015年2 月 ChineseJournal of Electron Devices Feb. 2015 Effects of Different Ⅴ/ Ⅲ Ratios on the Properties of m-Plane GaN Crystal∗ 1 1∗ 1 2 3 TAN Congcong ,PENGDongsheng ,CHEN Zhigang ,LIU Yi ,FENGZhechuan (1．Key Lab of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,Shenzhen University, Shenzhen Guangdong 518060,China;2．Normal College,Shenzhen University,Shenzhen Guangdong 518060,China; 3．Institute of Photonics and Optoelectronics and Department of Electrical Engineeringical Engineering,National Taiwan University,Taipei 10617,China) Abstract:The m-planeGaNfilmisgrownonsapphiresubstratebymolecularbeanepitaxy(MBE).Surfacemorpholo- gy isanalyzedbytheatomicforcemicroscope(AFM)andthescanningelectronmicroscope(SEM),Theseresultsshow that the root mean surface(RMS)roughness of the GaNfilm decreasefrom 13.08nm to 9.07 nm with the Ⅴ/ Ⅲratio down from 1∶80 to 1∶90. Optical properties are investigated by spectroscopic ellipsometry(SE),and the thickness, refractive index and extinction coefficient were obtained. It is found that the thickness of the samples are consistent with theretical values,andalowerrefractiveindex andlargertransmittancecanbegettingwhenthe Ⅴ/ Ⅲratio down to 1∶90.Therefore,the GaNfilmwith smaller Ⅴ/ Ⅲratio hasbetter quality. Key words:m-plane GaN;optical properties;MBE;surface morphology - EEACC:0520　 　 　 　 doi:10.3969/j.issn.1005 9490.2015.01.004 不同Ⅴ/ Ⅲ族元素比对m面GaN薄膜性能的影响∗ 1 1∗ 1 2 3 谭聪聪 ,彭冬生 ,陈志刚 ,刘　 毅 ,冯哲川 (1． 深圳大学光电子器件与系统(教育部