Ni2+掺杂对V2O5结构及电化学性能的影响.pdfVIP

第23卷第3期 无机材料学报 V01．23，No．3 Journalof Materials 2008年5月 Inorganic May,2008 文章编号：1000-324X(2008)03—0583—04 Ni2+掺杂对V205结构及电化学性能的影响 王虹1，唐致远1，李中延2 (1．天津大学4匕=r-学院，天津300072；2．迈科科技有限公司，东莞523700) 摘要： XRD，恒电流充放电、循环伏安和交流阻抗测试对反应产物的微观形貌、相结构及电化学性能进行了研究． 结果表明：掺杂少量Nin+对V205的晶型结构及表观形貌产生一定的影响，有利于降低V205的电荷转移电 阻；随着Ni2+掺杂量的增加，电化学电容器的比能量增大，当掺Ni2+2．5％时比能量为15．6Wh-kg一，库仑效 率达95．12％． 关键词：V205；电化学电容器；正极材料；Ni2+掺杂 中图分类号tTQl5文献标识码t A of Effectsof onStructureandElectrochemicalPerformance Ni2+Doping V205 WANG Zhi-Yuanl，LI Hon91，TANG Zhon分Yan2 ofChemicM and (1．School EngineeringTechnology,TianjinUniversity,Tianjin TechnologyCo．，Ltd．，Dongguan523700，China) cathode were with materials Abstract：Ni2+-dopedV205 synthesizedbyliquiddepositionprocess aft effectsof the andchemicM ofthe Ni2+on NiS04·6H20dopant．The phy’sical propertiestarget were material and sizeswerecharacterized compoundsinvestigated．Thestructure，microphologygrain XRDandSEM．Galvanostaticmethodand wereusedtomeasuretheelectrochemical AC by impedance ofthemateriM．Theresultsshowthatthe affectsthe structure performance Ni2+dopingproduct itis toreducethe of transferin theincreaseof slightly’andhelpful impedancecharge V205．With content，the