SiO 2基底上化学镀Ni-Mo-P薄膜的生长和形成机理.pdfVIP

Trans. Nonferrous Met. Soc. China 23(2013) 3629−3633 Growing process and reaction mechanism of electroless Ni−Mo−P film on SiO2 substrate 1,2 1 1 1 Mei-ling WANG , Zhi-gang YANG , Chi ZHANG , Dian-long LIU 1. School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China; 2. Division of Nano Metrology and Materials Measurement, National Institute of Metrology, Beijing 100013, China Received 14 March 2013; accepted 10 September 2013 Abstract: The diffusion barrier Ni−Mo−P film for Cu interconnects was prepared on SiO /Si substrate using electroless method. The 2 surface morphology and composition during the formation process of electroless Ni−Mo−P film were investigated through analyzing samples of different deposition time. Induced nucleation, induced co-deposition, and self-induced growth mechanisms involved in electroless process were confirmed by field-emission scanning electron microscopy (FE-SEM), energy dispersive spectrometry and atomic force microscopy (AFM). Firstly, the preceding palladium particles as catalysts induce the nucleation of nickel. Secondly, the nickel particles induce the deposition of molybdenum and phosphorus, which attributes to induced co-deposition. Thirdly, former deposited Ni−Mo−P induces deposition of the latter Ni−Mo−P particles. Moreover, the reaction mechanism was proposed with the 3− oxydate of PO4 . Key words: Ni−Mo−P deposit; induced-deposition; electroless deposition; SiO2 substrate