衬底温度对磁控溅射法制备的ZnO_In薄膜光电性能的影响_杨小飞.pdfVIP

56 2009 10 30 5 杨小飞 等: 衬底温度对磁控溅射法制备的ZnOB In 薄 光电性能的影响 ZnOBIn 1 1, 2 1 1 1 3 杨小飞 , 方 亮 , 彭丽萍, 黄秋柳 , 周 科 , 孔春阳 ( 1. ; 2 . , 400030 ; 3 . , 400046) : 以粉末靶为溅射源,采用射频磁控溅射法在玻璃衬底上制备掺铟氧化锌(ZnO B In) 透明导电 利用X 射线衍射仪原子力显微镜霍尔测试仪, 以及分光光度计等对不同衬底温度 下生长的ZnO B In 薄 的结构光电性能进行表征结果表明, 所有制备的ZnO B In 薄 均为六 角纤锌矿结构的多晶 , 具有( 002) 择优取向ZnO B In 薄 的电阻率随着衬底温度的升高先减 - 3 小后增大, 当衬底温度为100 e 时, 薄 的最低电阻率为3. 18 @ 10 8 # cm制备的薄 可见光 范围内透过率均在85% 以上 : ; ; ; : O484. 1 : A : 1001- 5868(2009)05- 0711- 04 Effects of Substrate Temperature on Optoelectron c Propert es of ZnOB In F lm Prepared by RF Magnetron Sputter ng 1 1, 2 1 1 1 3 YAN Xiao-fei , FAN Liang , PEN L-i ping , HUAN Qiu-liu , ZHOU Ke , KON Chun-yang ( 1. Department of Appl ed Phys cs; 2 . Key Laboratory of Optoelectron c Technology and Systems of the Educat on M n stry, Chongq ng Un vers ty, Chongq ng 400030, CHN; 3 . Department of Appl ed Phys cs, Chongq ng Normal Un vers ty, Chongq ng 400046, CHN) Abstract: Indium doped zinc oxide ( ZnO B In) films were deposited on glass substrates by RF magnetron sputtering method using a powder target. T he influence of the substrate temperature on the structure, optical and electrical properties was investigated by X-ray diffraction ( XRD) , atom force microscope ( AFM) , Hall measurement and optical transmission spectroscopy. T he results show all the obtained films are polycrystalline with a hexagonal wurtzite structure and grow preferentially in the ( 002