光化法去除四氯化硅中三氯氢硅的实验研究.pdfVIP

第 42卷第 12期 无机盐工业 2010年 12月 INORGAN IC CHEM ICALS INDUSTRY 37 , , , , , ( , 100088) : , 330~ 380 nm , , : ; ; 221; , , , : ; ; : TQ127. 2 : A : 1006- 4990( 2010) 12- 0037- 03 E xper im en tal study on rem oving of tr ich lorosilane in silicon tetrach loride w ith photoch em istry reaction M aoW ei, Su X iao ing, W ang T ieyan, Yuan Q in, Mo Jie, Ren Jian (B eji ing Guoj ing Inf ared Op tical Technology C o. , L td. , General R esearch Institute f or N on-FerrousM etals, Beijing 100088, China) A bstrac t: Removing of trich lorosilane, wh ich is often found in s ilicon tetrach loride w ith hotochem istry m ethod w as stud ied using raw silicon tetrach loride from m arket as m ateria.l M ajor factors influencing hotoreaction effect and relation sh i of these factorsw ere analyzed during the hotoreaction rocess using u ltraviolet light at 330~ 380 nm. Resu lts showed that hotoreaction tmi e increasesw ith the dosage of raw material increases and the decrease of light intensity. In order to re m ove trichlorosilane, the am oun-to-fsubstance ratio of ch lorine to trich lorosilane must be greater than 221 at least. There ex isted a critical value, w hen amoun-t of- substance ratio of ch lorine to trich lorosilane w as not over it, hotoreaction tmi e de - - creased as the am ount of substance ratio increased, otherw ise hotoreaction tmi e w ill on ly increased. In addition, the bigger the light intensity, the sm aller the critical value. K ey w ord s: s ilicon tetrach loride; trichlorosilane; hotochem ical reaction [ 3- 4] ( SiCl ), - 4 - SiCl, SiCl SiHCl 85% ~ 95%