Effect of temperature on the binding energy of a shallow hydrogenic impurity in a Quantum W.pdfVIP

5 0 Effect of temperature on the binding energy 0 2 of a shallow hydrogenic impurity in a p Quantum Well Wire e S T G Emam 4 Department of Mathematics, Faculty of science, Ain Shams university, 1 Abbassia, Cairo, Egypt. and ] l Department of Mathematics, the German university in Cairo-GUC, New l a h Cairo city, Main Entrance Al Tagamoa Al Khames, Egypt. - s e Abstract m This work studies the effect of temperature on the binding energy of a shal- . t low hydrogenic impurity located on the axis of a cylindrical semiconductor a GaAsAl Ga As quantum well wire. The results show that the binding m x 1−x - energy at a low temperature of 100K is increased by about 11% over that d n associated with nearly room temperature, 300K , and is also increased by o about 23% over that associated with temperature of 500K . c [ 1 v 1 Introduction 5 7 3 The electronic properties of a hydrogenic impurity in the quantum well[1,2,3,4] 9 0 and the quantum well wire(QWW)[5,6,7,8,9,10] has been the subject of many 5 articles . The binding energy of a shallow hydrogenic impurity in a quantum 0 / well wire has been calculated as a function of the wire radius [5]. It has been t a found that the binding energy increases with decreasing the wire radius for m an infinite well whereas it reaches a peak value and then diminishes to a lim-