Effect of the growth sequence on the properties of InGaP_GaAs_InGaP quantum wells grown by LPMOVPE.pdfVIP

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Effect of the growth sequence on the properties of InGaP_GaAs_InGaP quantum wells grown by LPMOVPE.pdf

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Effect of the growth sequence on the properties of InGaP_GaAs_InGaP quantum wells grown by LPMOVPE

Applied Surface Science 222 (2004) 423–431 Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources a a,* a a a M. Begotti , M. Longo , R. Magnanini , A. Parisini , L. Tarricone , C. Bocchib b b b a,c , F. Germini , L. Lazzarini , L. Nasi , M. Geddo a ` Istituto Nazionale di Fisica della Materia-Dipartimento di Fisica, Universita di Parma, Parco Area delle Scienze 7/A, Parma 43010, Italy bIstituto IMEM-CNR, Parco Area delle Scienze 37/A, Parma 43010, Italy c ` Istituto Nazionale di Fisica della Materia-Dipartimento di Fisica, Universita di Pavia, Via Bassi, 6, Pavia 27100, Italy Received 30 July 2003; received in revised form 9 September 2003; accepted 9 September 2003 Abstract Lattice-matched, single and multiple InGaP/GaAs/InGaP quantum wells (QWs) were grown at 600 8C by low-pressure metalorganic vapour phase epitaxy (LP-MOVPE), with the use of the tertiarybuthylarsine (TBAs) and tertiarybuthylphosphine (TBP) group-V sources. In order to enhance the interface abruptness, different gas switching sequences were exploited during the growth of the interface, and the best results were obtained by inserting a few monolayer-thick GaAsP interlayers (IL), at the direct GaAs-on-InGaP interface. Low-temperature photoluminescence (PL), high resolution X-ray diffraction, transmission electron microsc