A physical model of time dependent dielectric breaddown in copper metallization.pdfVIP

A Physical Model of Time-Dependent Dielectric Breakdown in Copper Metallization Wen Wu, Xiaodong Duan*, and J. S. Yuan Chip Design and Reliability Laboratory, School of Electrical Engineering and Computer Science, University of Central Florida, Orlando, FL 32816-2450, USA *Photonic Center, AVANEX Corporation, Richardson, TX 75081, USA ABSTRACT TDDB DEGRADATION MODEL A physical model of copper interconnect dielectric breakdown is The general accepted dielectric breakdown caused by copper studied. The general continuity equation about Cu+ diffusion and drift includes the following steps [4]: 1 Cu ionization and injection of Cu+ + is evaluated. An analytical expression to predict the lifetime of from the anode into the dielectric; 2 drift of Cu through the TDDB is developed. The model predictions agree well with the dielectric; and 3 completion of forming leakage passages and experimental data at different electric fields and temperatures. The accumulation of Cu+ near the cathode, which results in an increase of lifetime is proportional to the exponential of electric field under an electron leakage currents and subsequent dielectric breakdown. This acceleration stress and consistent with the “E” model. is illustrated in Figure 1. It is believed that the existence of traps, which is the deep level acceptor, in dielectric influences the Cu KEY WORDS: TDDB lifetime, copper metallization, ionization [7]. The existence of the traps depends on the dielectric reliability, copper diffusion, “E” model. material and the manufacturing environment conditions +[14]. The formation of leakage passages and accumulation of Cu near the cathode accompany the process of Cu+ diffusion and drift through the INTRODUCTION dielectric. This process depends on many factors, such