《models.mph.laser_heating_wafer》.pdf

Solved with COMSOL Multiphysics 4.3b Laser Heating of a Silicon Wafer Introduction A silicon wafer is heated up by a laser that moves radially in and out over time while the wafer itself rotates on its stage. Modeling the incident heat flux from the laser as a spatially distributed heat source on the surface, the transient thermal response of the wafer is obtained. The peak, average, and minimum temperatures during the heating process are computed, as well as the temperature variations across the wafer. 10 W Laser 120 RPM Figure 1: A silicon wafer is heated with a laser that moves back and forth. The wafer is also being rotated about its axis. Model Definition A 2-inch silicon wafer, as shown in Figure 1, is heated for one minute by a 10 W laser that moves radially inwards and outwards, while the wafer rotates on its stage. Assuming good thermal isolation from the environment, the only source of heat loss is from the top surface via radiation to the processing chamber walls, which are assumed to be at a fixed temperature of 20 °C. © 2 0 1 3 C O M S O L 1 | L A S E R H E A T I N G O F A S I L I C O N W A F E R Solved with COMSOL Multiphysics 4.3b The laser beam is modeled as a heat source in the plane with Gaussian profile. To set up the heating profile the model uses the built-in Gaussian Pulse functions, which