低温沉积p型氢化纳米硅与非晶硅pin顶衬太阳电池.pdfVIP

Low temperature deposition of p-type nc-Si:H thin films for superstrate a-Si:H based p-i-n solar cells 1,2 1 1 2 2 Hu Zhihua , Shi Qingnan , Cai Yi , Elvira Fortunato , Rodrigo Martins , Diao Hongwei3 3 3 , Xu Ying , Liao Xianbo 1 Instrumental Center, Kunming University of Science Technology, Kunming, China (650031) 2 Department of Material Sciences and CEMOP/UNINOVA, New University of Lisbon, Portugal 3 Institute of semiconductors, Chinese Academy of Science, Beijing, China (100083) E-mail ：zhuahu1963@ Abstract Boron doped nc-Si:H p-layers were deposited by PECVD technique at a low substrate temperature (~60 0C) with various hydrogen dilution ratio of 150, 100 and 50 respectively. Transmission studies were carried out on these nc-Si:H films to understand the systematic variation of the optical band gap. A detailed and well organized investigation was employed on nc-Si:H films using Raman scattering measurements to identify the exact origin of optical and acoustic vibration modes from Si nanocrystallites as well as from a-Si. Using peak fit software analysis the crystalline volume fraction of nc-Si:H p-layers was estimated as ~73%, 52% and ~16% respectively for 150, 100 and 50 hydrogen dilution. The presently developed nc-Si:H p-layers with different crystalline fraction have been incorporated in single junction a-Si:H solar cells with a superstrate configuration of TCO/p-nc-Si:H (2