指数掺杂透射式GaAs光电阴极表面光电压谱研究.pdfVIP

38 9 Vol. 38, No. 9 2011 9 CHINESE JOURNAL OF LASERS September, 2011 指数掺杂透射式GaAs光电阴极表面光电压谱研究 1, 2 1 1 1 陈 亮 钱芸生 常本康 张益军 1 , 210094 2 , 310018 , GaAs ( M OCVD) , , ; GaAs ; ; TN214; O436 A doi: 10. 3788/ CJL201138. 0906002 Research on SurfacePhotovoltageSpectroscopy for Exponential Doping Transmission-ModeGaAs Photocathodes 1, 2 1 1 1 Chen Liang Qian Yun heng Chang Benkang Zhang Yij un 1 Instit te of Elect ronic En gineering Optoelectron ics Techn ology , Nanjing Un iversit y of Science an d Techn ology , Nanjin g, J iangs 210094, Chin a 2 In stit te of Opt oelect ronics Techn ology , Chin a J ilian g Univer sit y , Hangzho , Zhejiang 310018, Chin a Abstract By olving the one-dimen ional diffu ion equation for equilibrium minority carrier of tran mi ion-mode GaA phtotocathode , the equation for urface photovoltage pectro copy of exponential and uniform doping tran mi ion-mode GaA photocathode are deduced. Through metal organic chemi try vaporation depo ition (MOCVD) technique, two GaA photocathode of different doping tructure with the ame active layer depth are de igned. By mea uring and theoretically emulating the urface photovoltage pectro copy curve for two material , the exponential doping tructure can well increa e the electric diffu ion length for tran mi ion-mode GaA photocathode . The rea on i that the internal electric field can drive the photo-excited electron to m