2005Synthesis of the Ti3SiC2 by solid state reaction below melting].pdfVIP

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2005Synthesis of the Ti3SiC2 by solid state reaction below melting].pdf

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2005Synthesis of the Ti3SiC2 by solid state reaction below melting].pdf

Journal of Alloys and Compounds 392 (2005) 285–290 Synthesis of the Ti SiC by solid state reaction below melting 3 2 temperature of Si a b,∗ c S.S. Hwang , S.W. Park , T.W. Kim a Department of Automotive Engineering, Kookmin University, Seoul 136-702, Republic of Korea b Multifunctional Ceramics Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea c Department of Mechanical Engineering, Kookmin University, Seoul 136-702, Republic of Korea Received 28 June 2004; accepted 6 August 2004 Available online 30 October 2004 Abstract In this study, TiCx (x = 0.67)/Si powder mixture was used to synthesize Ti SiC by pressureless heat treatment below the melting point of 3 2 Si under Ar atmosphere. Ti3 SiC2 was synthesized using TiCx /Si powder mixture with a molar ratio 3TiCx :1Si at the temperature range of 900–1340 ◦C without forming any other intermediate phases. Ti SiC was simply synthesized by a direct reaction between TiC and Si in 3 2 x a solid state. Furthermore, it appeared that high purity Ti3 SiC2 could be synthesized from TiC (0.67)/Si powder mixture by optimizing Si