Radiation-sensitive irs mutants rejoin DNA double-strand breaks with efficiency similar to that of parental V79 cells but show altered response to radiation-induced G2 delay》.pdf

Mutation Research, DNA Repair. 274 (1992) ! 11-122 i;1 © 1992Elsevier Science Publishers B.V. All rights re,fred 11921-8777/92 /S05.01J MUTDNA 06492 Radiation-sensitive irs mutants rejoin DNA double-strand breaks with efficiency similar to that of parental V79 cells but show altered response to radiation-induced G 2 delay N g e C h e o n g , Y a W a n g , M a r y J a c k s o n and G e o r g e lliakis ThomasJefferson Unirersity,Department of Radiation Oncologyand Nuclear Medicine, Philadelphia. PA 19107(U.S.A.) (Received 12 September 1991) (Revision received 19 December 1991) (Accepted 20 December 1991) Keywords: lrs cells: DNA double-strand breaks, repair of; G 2 delay: Cell killing, radiation-induced Summary Induction and repair of DNA double-strand breaks (dsb) was investigated in plateau phase Chinese hamster V79 cells and three radiosensitive mutant cell lines derived from them, irs-l, irs-2 and its-3, using a pulsed-field gel electrophoresis assay, Asymmetric Field Inversion Gel Electrophoresis (AFIGE). There was no difference in the induction of DNA dsb per Gy and dalton between the radiosensitive mutant cells and wild-type V79 cells despite the wide differences in their radiosensitivity. Also, repair of DNA dsb proceeded in all cell lines with similar kinetics. In contrast to these observations at the DNA level, irradiation of exponentially growing cells showed a prolonged delay in G., for its-2 cel