Realizing high breakdown voltage for a novel interface charges islands structure based on partial-SOI substrate》.pdf

Microelectronics Reliability 52 (2012) 692–697 Contents lists available at SciVerse ScienceDirect Microelectronics Reliability journal homepage: /lo cate/microrel Realizing high breakdown voltage for a novel interface charges islands structure based on partial-SOI substrate Shengdong Hu a,b,⇑, Jun Luo b, Kaizhou Tan b, Ling Zhang a, Zhaoji Li c, Bo Zhang c, Jianlin Zhou a, Ping Gan a, Guolin Qin b, Zhengyuan Zhang b a College of Communication Engineering, Chongqing University, Chongqing 400030, China b National Laboratory of Analogue Integrated Circuits, Sichuan Institute of Solid-State Circuits, No. 24 Research Institute of China Electronics Technology Group Corporation, Chongqing 400060, China c State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China a r t i c l e i n f o a b s t r a c t Article history: A novel interface charge islands partial-SOI (ICI PSOI) high voltage device with a silicon window under the Received 24 August 2010 source and its mechanism are studied in this paper. ICI PSOI is characterized by a series of equidistant high Received in revised form 7 November 2011 concentration n+-regions on the bottom interface of top silicon layer. On the condition of high-voltage Accepted 7 November 2011 + blocking state, inversion holes located in the spacing of two n -regions effectively enhance the electric Available online 25 November 2011