Recombination gamma-luminescence at the nanometal Li – dielectric LiF interfaces》.pdf

Radiation Physics and Chemistry 111 (2015) 40–45 Contents lists available at ScienceDirect Radiation Physics and Chemistry journal homepage: /locate/radphyschem Recombination gamma-luminescence at the nanometal Li – dielectric LiF interfaces E.M. Ibragimova n, M.A. Mussaeva, Sh.N. Buzrikov Institute of Nuclear Physics Academy of Sciences, pos. Ulugbek, Tashkent 100214, Uzbekistan H I G H L I G H T S 5 7 GL band at 420 nm (F-center at Cu impurity) decreases 5 times from 10 to 10 R. þ 6 GL band at 570 nm increases due to F-centers aggregation to F4 at 410 R, 4370 K. GL at the Li–LiF interface accompanies growth of nano-Li from mobile Li vacancies. a r t i c l e i n f o a b s t r a c t Article history: Recombination 60Co-gamma-luminescence (GL) was studied experimentally in LiF:K,Cu crystals at the Received 16 October 2014 dose rate 406 R/s in the temperature range 273–473 K, when localized charge carriers are released from Received in revised form the hole/electron color center traps and Li vacancies are highly mobile. The crystals were preliminary 8 February 2015 60 7 8 9 irradiated in the Co gamma-source at 300–320 K to doses 10 , 10 , 10 R to generate F-aggregate Accepted