SPIE08.talk.grant.ppt.pptVIP

Physics of reverse annealing in high-resistivity ACIS Chandra CCDs Catherine E. Grant (MIT) Bev LaMarr, Gregory Prigozhin, Steve Kissel, Stephen Brown, Mark Bautz Talk Outline (Brief) Description of ACIS CCDs Flight experience with irradiation/annealing First ground experiment in 2002 Experimental setup in 2005 Data analysis results Sources of systematic errors Summary future plans ACIS CCDs Framestore-transfer High-resistivity float-zone silicon Depletion depth: 50-75 mm 24 mm pixels 40 msec/pix image-to-framestore transfer rate Four output nodes 105 pix/s 3.2 sec nominal frame time 1999 flight experience with irradiation and annealing Displacement damage in imaging array Charge transfer inefficiency (CTI) ~ 1-2 x 10-4 at 6 keV No damage in framestore and serial-transfer arrays No damage to back-illuminated CCDs Believed to be due to soft protons (~200 keV) scattered by mirror during radiation belt passages After focal plane was warmed from –100°C to +30°C for 8 hours, CTI increased by 34% Laboratory experiment 2002 Designed to duplicate flight experience Low-temperature irradiation CCD at –100°C; 120 keV protons 8-hour +30°C annealing cycle CTI increased by 150% Much larger than flight increase (34%) Possible causes: variations between CCDs, different irradiating particle spectrum, ? See Bautz, et al. 2005, IEEE Trans. Nucl. Sci, 52(2), 519 Proposed “Model” for CTI Increase from Annealing One possible model Reverse annealing of carbon impurities causes CTI increase during bakeout. Expect chip-to-chip variations in carbon concentration to cause variations in CTI increase. Measurements of carbon concentration show much smaller variation than required by differences between 2002 laboratory flight results. Schematic of silicon lattice changes during irradiation bake Laboratory experiment 2005 Designed to better explore parameter space and understand why flight and ground experience differed Six front-illuminated CCDs 5 from ACIS backup focal plane 1 from 2002 exp