双重图形技术在后端设计中解决方案.pdfVIP

5．2．1双重图形数据库准备··································3l 5．2．2双重图形意识的布局··································35 5．2．3双重图形意识的布线-·································37 5．3DPT寄生参数提取·········································42 5．3．1没有预定义颜色的版图DPT提取························44 5．3．2有预定义颜色的版图DPT提取··························45 5．4DPT物理验证·············································48 5．4．1库单元分解··········································49 5．4．2一致性检查··········································50 5．4．3自动修复DPT·········································52 5．5设计实例·················································54 5．5．1布局布线············································54 5．5．2物理验证············································56 5．5．3参数提取············································57 第六章总结展望··················································58 参考文献·························································59 附录·····························································60 致谢·····························································62 Il 万方数据 摘 要 当集成电路设计进入20纳米技术节点的时候，其对应的半间距(HalfPitch， HP)是32纳米，而最先进浸入式光刻系统只能支持最大半间距40纳米，可见其 没有足够的成像能力。深紫外(EUV)技术的曝光波长可以下降到13．5纳米， 并且被认为是下代光刻技术的实际光源。然而在深紫外光刻技术适合大量生产 前，需要一个合适的曝光技术来弥补浸入式ArF和深紫外扫描仪之间的空白。 双重图形技术(Double PatterningTechnology，DPT)是这样一种延长浸入式 ArF系统可用性的技术。值得注意的是，DPT放宽了电路版图的最小间距。因此 水介质浸入式ArF系统能够延伸到32纳米技术节点以下。DPT只需对现有光刻 基础设施进行很小的改动，就可以有效填补更小节点的光刻技术空白。本论文 阐述了DPT在EDA后端设计中理想的解决方案是从布局布线阶段开始将DPT考 虑进去，接着进行快速的、独立的一致性检查，从而能够在设计早期发现问题。 另外一个关于物理实现的关键因素是对DPT效应的提取。这些效应需要准确的 建模从而保证准确的时序签核。Synopsys的IC Compiler布局布线通过使用相 关技术规避双重图形违规(DRC 指定的双重图形设计规则，从而自动兑现双重图形需求。从布局开始，双重图