有限厚势垒应变纤锌矿Al-%2cx-Ga-%2c1-x-N%2fGaN异质结中电子迁移率及压力效应.pdfVIP

有限厚势垒应变纤锌矿AlxGal．xN／GaN异质结中 电子迁移率及其压力效应 摘要 本文采用数值自洽计算波函数和求解力平衡方程相结合的方法，在极化光学 电子迁移率问题．考虑有限厚势垒和导带弯曲的实际异质结，计入自发极化和压 电极化产生的内建电场之作用，给出界面及半空间光学声子作用下电子迁移率随 A1组分，势垒厚度及温度变化的数值计算结果． 导作用，而当x0．18，来自沟道区的半空间声子散射则起主导作用．结果还表明： 电子迁移率随势垒厚度增加而增加，且逐步趋于一稳定值．应变和压力效应加剧 电子迁移率随温度增加而降低的趋势． 关键词：电子迁移率， Electron instrainedwurtzite mobility AIxGal．xN／GaN withfinite-thick barriersandits effect pressure ABSTRACT Based onanumericalmethodof thewavefunctioncombinedwim calculating theforcebalance electron instrainedwurtzite solving equation，themobility A1xGal．xN／GaN isdiscussedwithin dominated heterojunctions temperaturerange by realistic whichincludesthe opticalphononscattering．A influenceof heterojunction band thicknessof built—in energybending，finite barriersand electricfieldinduced by and is toobtaintheelectron spontaneouspiezoelectric polarizationinvestigated inconsiderationof mobility the fromtheinterfaceandhalf scattering space optical modesasfunctionsofAl thicknessand phonon concentration，barrier temperature． Theresultsshowthattheelectron incr