Nb掺杂Bi4Ti3O12陶瓷的微结构与介电性能研究.pdf

Nb掺杂凰Ti3012陶瓷的微结构与介电性能研究／黄小丹等 ·9· Nb掺杂Bi4Ti30。2陶瓷的微结构与介电性能研究。 黄小丹，王华，任明放，许积文，杨玲 (桂林电子科技大学材料信息科学与工程系，桂林541004) 摘要 采用固相烧结工艺制备了Nb掺杂的瓯Ti3012(BIT)铁电陶瓷。用Ⅺm和AFM对其微观结构进行 了分析，研究了Nb掺杂对材料微观结构和介电性能的影响。结果发现，微量Nb的掺入并未改变BIT的晶体结构， 但可减小陶瓷的晶粒尺寸并降低材料的居里温度。同时，Nb的掺入大大降低了BIT陶瓷的介电常数并青IJ平了BIT 陶瓷的介电损耗峰，适当掺杂Nb可明显降低BIT陶瓷的介电损耗。 关键词 铁电陶瓷介电性能BIT微结构 ofMicrostructuresandDielectric of Investigation Property Ceramics Bi4Ti3012 Nb-doped 。HUANG Xiaodan，WANGHua，REN Jiwen，YANG Mingfang，XU Ling ofInformatinalMaterial (Department ofElectronicTechnology，Guilin541004) ScienceEngineering，GuilinUniversity Abstract ceramicsare solid-statereactionme- Nb-dopea瓯Ti3012(BIT)ferroelectric the preparedbyusing thod．Theirmicrostructuresare XRDandSEM．Effectsof contentOilthemicrostructuresand analyzedby Nb-doping dielectric arestudiedTheresultsshowthatthe of Nbdoesnot the struc- property tiny-amount changecrystal doping tureofBIT．However，thesizeandCurie aredecreased．Meanwhile，thedielectriccOnstantofBIT grain temperature ceramicsis decreased．andthe ofdielectriclossis withthe ofNb．1he greatly peak scraped proper doping Nb-doping carlalso dielectricBIT reducethe lossof ceramics． obviously wolr凼 ferroele