PHE13005-2.pdfVIP

Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13005 GENERAL DESCRIPTION The PHE13005 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0V - 700 V VCBO Collector-Base voltage (open emitter) - 700 V VCEO Collector-emitter voltage (open base) - 400 V V Emitter-Base voltage (I = 0) - 9 V EBO B IC Collector current (DC) - 4 A ICM Collector current peak value - 8 A P Total power dissipation T ≤ 25˚C - 75 W tot mb V Collector-emitter saturation voltage I = 2A; I = 0.5A 0.2 0.6 V CEsat C B t Fall time I = 2A; I = 0.4A; V = 5V 0.1