Materials 2012 Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for Advanced CMOS Devices外文翻译.pdfVIP

  • 13
  • 0
  • 约12.22万字
  • 约 35页
  • 2016-03-13 发布于江西
  • 举报

Materials 2012 Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for Advanced CMOS Devices外文翻译.pdf

Materials 2012, 5, 443-477; doi:10.3390/ma5030443 OPEN ACCESS materials ISSN 1996-1944 /journal/materials Review Comprehensive Study of Lanthanum Aluminate High-Dielectric-Constant Gate Oxides for Advanced CMOS Devices Masamichi Suzuki

您可能关注的文档

文档评论(0)

1亿VIP精品文档

相关文档