Chap1FundamentalConceptsandMethods(new)解说.ppt

Principles of Surface Physics;Why we need this course?;Contents;参考书目： 1, “Principles of Surface Physics”, F. Bechstedt, Springer-Verlag Berlin Heidelberg 2003. 2, “Surface Physics and Surface Analysis”, 丁训民、杨新菊、王训，复旦大学出版社 2004 ;考核办法;办公室：G313 电话604 e-mail: lyhua@shu.edu.cn;CHAPTER 1 Fundamental Concepts and Methods;1.1 The Silicon Age;Preparing element silicon: SiO2+3C ---- SiC+2CO 2SiC+SiO2---- 3Si+2CO ( Impurity: C、B、P and Fe、Al );Cz method for preparing crystal silicon;Diamond structure ab=5.43? fcc, (0,0,0) and (1/4,1/4,1/4) primitive translation vectors: (1/2,1/2,0),(1/2,0,1/2),(0,1/2,1/2) bond length b=2.35?, bond angle α=109.47o bond energy Eb=2.32eV; Indirect band gap Eg=1.1eV (1.2eV at 0K) (So silicon crystals are not good for optoelectronics!);Doping of silicon;Other form of silicon;Surface technics of silicon;Other property of silicon;The MOS technology;Digital and analog systems;Memory cells;Miniaturization;What is miniaturization? Means shorter channels, shallower junctions, and thinner oxides, then a chip can deal with more data and works faster.;Technological MOS processes;The Subjects of Surface Physics;Subjects (1) Surface atomic structures ;(2) Surface electronic states a. Dangling bonds and surface states; b. Adsorption and chemical reactions; c. Fermi level pinning, tailors the Schottky barrier height, and affects the band alignment at the hetero-interface. ;(3) Surface adsorption;Methods of Modern Surface Science;Surface Experimental techniques;Scanning Tunneling Microscopy (STM) and Spectroscopy (STS);Ernst Ruska;I~Ve-2kd (I~0.1nA-10nA;V~1mV-4V);Tip;Scanner;Feedback loop;The two basic imaging modes of STM; One important caution must be kept in mind when examining data from STM experiments. Although the STM images give us a straightforward view of the surface topography, the ob