不同金属电极对非晶铟镓锌氧化物晶体管接触电阻的影响和分析.pdfVIP

ABSTRACT Thin Film Transistor is a field effect device, which is composed of electrodes, semiconductor layer and insulating layer. It is the core components of Liquid Crystal Display (LCD) and Active Matrix Organic Light Emitting Diode (AMOLED) drive circuit. The current mainstream LCD screen use poly crystalline silicon TFT or amorphous silicon TFT. However, polysilicon has complex manufacture, high cost and poor uniformity. Besides, its difficult to produce extensively. Although the carrier mobility of the amorphous silicon is not very low, the degree of refinement is still not high. So it restricts the development of a new generation of AMOLED display technology. In recent years, the broad band gap oxide semiconductor has made great progress, especially the transparent amorphous indium gallium zinc oxide thin film transistor (IGZO-TFT). It is better than the amorphous silicon in the carrier mobility, transmittance and uniformity. And it can be produced in a low temperature. Whats more, a higher degree of refinement can be got. This article focuses on different electrode materials and the influence of annealing temperature on the device performance. The influence of the metallic electrode materials on the contact resistance of the ink-jet printed In-Ga-Zn oxide (IGZO) thin film transistors (TFTs) is investigated in this paper. Various electrodes, including Al, Ti/Au, ITO and Au were examined based on the inverted staggered (bottom gate top contact) IGZO TFTs. Without additional annealing, the contact resistance increased with the increase of the work function of the electrode, which is Al Ti/Au ITO Au. However, the contact resistance behav