第4章 常用传感器 - 6(3.22-3.25).ppt

Chapter IV Commonly used Sensors(常用传感器);光电效应;;4.6.1The concept of Photoelectric effect;2. Photovoltaic effect and photodiodes, photovoltaic cells;4.6 Photoelectric Effect and Sensors;Photodiodes (PDs):;Photocell: (voltage source 电压源) Convert light energy into electrical energy. Typical photocell: Silicon photocell: widely used in satellites and spacecraft. Selenium photocell: used in some analytical instruments and measuring instruments . Note: Optoelectronic devices and spectral characteristics. Sensitivities depends on the wavelengths of light. It must be pay attention to use the certain wavelengths of light.;4.6 Photoelectric Effect and Sensors;3. Applications of Photoelectric Sensor;4.6.2 CCD?Image Sensor;1. The basic structure and working principle;(2) The storage principle of charge Take the P-type silicon semiconductor for example. Positive voltage Ug is applied in the metal electrode (or gate) Ug exceeds the threshold voltage of MOS transistor (晶体管) Electric field forms through oxides (SiO2) thin film Surface potential energy change at the interface of Si-SiO2. Electrons are attracted to the interface of semiconductor. Depletion region (耗尽层) of negative charge form --surface potential well The number of photo-generated electrons absorbed within the potential well is proportional to the incident light intensity. The stored charge is called the charge packets. Generated holes simultaneously are ejected from the depletion region field. ;(3) Charge transfer Charge transfer process between the two gates: Three phase clock pulse (三相时钟脉冲) ;2. The inject and output of charge (电荷的注入和输出) (1) The injection method of charge (注入方法) CCD charge injection method has two kinds: optical injection and electrical injection.;为什么要注入电荷？;Figure 4-36 (a): Back light injection method. (Front light injection method for transparent electrode透明电极). Conversion between optical and electrical signals (光电信号转换过程) Semiconductor absorbs light ? Electron-hole pairs produ