《ESD Protection Device With Dual Polarity Conduction and High Blocking Voltage Realized in CMOS Process》.pptxVIP
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- 2016-07-25 发布于浙江
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ESD Protection Device With Dual-Polarity Conduction and High Blocking Voltage Realized in CMOS Process
Sirui Luo, Student Member, IEEE, Javier A. Salcedo, Senior Member, IEEE, Jean-Jacques Hajjar,
Yuanzhong Zhou, Member, IEEE, and Juin J. Liou, Fellow, IEEE
2014 IEEE Electron Device Letters;Structure;Abstract;Introduction;Bidirectional SCR Structure;Bidirectional SCR Structure;Experiment Results;Experiment Results;Experiment Results;Summary;Summary;评价;Thanks
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