林德升158-159-B27.docVIP

158-159-B27 For the direct band-to-band recombination, the excess majority-carrier holes recombine at the same rate, so that for the p-type material (4.60) In the case of an n-type material (n0p0) under low-level injection, the decay of minority-carrier holes occurs with a time constant where is also referred to as the excess minority-carrier lifetime. The recombination rate of the majority-carrier electrons will be the same as that of the minority-carrier holes, so we have (4.61) The generation rates of excess carriers are n