277AMidterm2010.docVIP

EECS277A, Spring 2010 Adv. Semiconductor Devices Midterm Exam May 4, 2010, Tuesday, 9:30-10:50am 40% 1. Please answer the following questions briefly and clearly. You must answer with your own words. Copying entire sentences or paragraph from the book will not result in any credit. Identify 4 electronic products that do not contain silicon (you can list at most four). What is the greatest fundamental technical advantage of MOSFETs versus bipolar junction transistors (BJT) in implementing integrated circuits? In Fig. 1.3 (p. 5) of CMOS device cross section, why is the n-well needed and how is it isolated from the p-substrate? What is the physical meaning of Fermi-Dirac function and what is the physical meaning of Fermi level? What is an indirect bandgap semiconductor and why is it called “indirect…”? How many atoms are contained in a unit cell of silicon crystal and where are they? Are we lucky or unlucky that silicon is an indirect bandgap semiconductor and why? What are the two carrier transport mechanisms and how are they connected (related)? A p-n junction diode is instantaneously turned from forward bias to reverse bias condition. It is found that the voltage over the diode won’t change instantaneously. Explain the reason. A p-type silicon substrate was doped with boron atoms. To fabricate an n-p junction, phosphorus atoms are diffused into the p-type silicon. In the resulting n-type region, the phosphorus concentration is higher than the boron concentration. What are in the depletion region of the resulting n-p junction (you must count everything). 15% 2. Sketch the energy band diagram of an n-type MOS structure at the onset strong inversion, similar to that of p-type MOS shown in Fig. 2.35a (p.84). Also sketch the charge density distribution, similar to Fig. 2.35b. You must sketch clearly and label everything. 10% 3. Sketch the energy diagram of a metal-Si (p-type) contact under thermal equilibrium condition, similar to Fig. 2.5