Handout 1-2.pptVIP

* * Heisenberg Uncertainty Principle (HUP) ? Implication of HUP: Impossible to precisely measure the position of an electron - Need to look for the “probability” of finding an electron at a certain position Probability Density Function (PDF): Finding the expectation value of important quantities such as position, momentum, and energy. Given a PDF, P(x) for 1-D problem, the probability of finding the particle in a range from x to x+dx is P(x)dx Since the particle will be somewhere, this definition implies that --------- (c) i.e., P(x) is normalized * * Heisenberg Uncertainty Principle - Find the average value of a function of x, f(x) when the P(x) is normalized ------ (d) - Find the average value of f(x) when the P(x) is not normalized, ------ (e) * * * Figure 1—9 Diamond lattice unit cell, showing the four nearest neighbor structure. (From Electrons and Holes in Semiconductors by W. Shockley, ? 1950 by Litton Educational Publishing Co., Inc.; by permission of Van Nostrand Reinhold Co., Inc.) Diamond Lattice Unit Cell * * Starting Materials SiO2 + 2C ? Si + 2CO (MGS formation ) Si + 3HCl ? SiHCl3 + H2 (Trichlorosilane formation) 2SiHCl3 + 2H2 ? 2Si + 6HCl (EGS) (fractional distillation) Growth of Single Crystals Polycrystalline Si EGS ? Single-crystal Si ingots (by Czochralski method) ? Wafer Fabrication * EGS : Electronic Grade Si (ppb impurities) * MGS : Metallurgical Grade Si (ppm impurities) * * Figure 1—10 Pulling of a Si crystal from the melt (Czochralski method): (a) schematic diagram of the crystal growth process; (b) an 8-in. diameter, (100) oriented Si crystal being pulled from the melt. (Photograph courtesy of MEMC Electronics Intl.) (b) Growth of Single Crystal Ingots * * Figure 1—11 Silicon crystal grown by the Czochralski method. This large single-crystal ingot provides 300 mm (12-in.) diameter wafers when sliced using a saw. The ingot is about 1.5 m long (excluding the tapered regions), and weighs about 275 kg. (Photograph courtesy of ME