培训课件,协助运主管对终端人员(客户、店长、导购)开展培训工作,提升终端运营管理水平.docVIP

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培训课件,协助运主管对终端人员(客户、店长、导购)开展培训工作,提升终端运营管理水平.doc

培训课件,协助运主管对终端人员(客户、店长、导购)开展培训工作,提升终端运营管理水平

Modelling, simulation, and visualisation together create the third branch of human knowledge on equal footing with theory and experiment. Model-Driven Development MDD has been proposed as a means to support the software development process through the use of a model-centric approach. The objective of this paper is to address the design of an architecture for scientific application that may execute as multithreaded computations, as well as implementations of the related shared data structures. New version program summary Program title: Growth09 Catalogue identifier: ADVL_v3_0 Program summary URL: http://cpc.cs.qub.ac.uk/summaries/ADVL_v3_0.html Program obtainable from: CPC Program Library, Queens University, Belfast, N. Ireland Licensing provisions: Standard CPC licence, http://cpc.cs.qub.ac.uk/licence/licence.html No. of lines in distributed program, including test data, etc.: 30?940 No. of bytes in distributed program, including test data, etc.: 3?119?488 Distribution format: tar.gz Programming language: Embarcadero Delphi Computer: Intel Core Duo-based PC Operating system: Windows XP, Vista, 7 RAM: more than 1 GB Classification: 4.3, 7.2, 6.2, 8, 14 Catalogue identifier of previous version: ADVL_v2_1 Journal reference of previous version: Comput. Phys. Comm. 180 2009 1219 Subprograms used: Does the new version supersede the previous version?: No Nature of problem: Molecular beam epitaxy MBE is a technique for epitaxial growth via the interaction of one or several molecular or atomic beams that occurs on a surface of a heated crystalline substrate. Reflection high-energy electron diffraction RHEED is an important in situ analysis technique, which is capable of giving quantitative information about the growth process of thin films and its control. The analysis of RHEED intensity oscillations has two purposes. One is to control the film growth, and the other is to understand the mechanism of the film growth using the MBE through the analysis

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