Design and Fabrication of Radiation Cell .pptVIP

Design and Fabrication of a 4H SiC Betavoltaic CellM.V.S. Chandrashekhar, C.I. Thomas, Hui Li, M.G. Spencer and Amit LalAdvanced Materials and Devices Applications (AMDA) Department of Electrical and Computer EngineeringCornell University, Ithaca, NY 14850, USA Presentation Outline Motivation Review theory of betavoltaic cell Potential loss mechanisms Comparison of materials options and predicted efficiencies Results to date Conclusion Beta-Voltaic Battery Motivation Long half lives of β-radiation sources. Low energy sources are relatively benign Small penetration depths Significant power density in source Applications Low accessibility sensor nodes On-chip power source for MEMS Standby power for cell-phones Pacemaker power supply Basic Operation Comparison with AA Battery Interaction of Hot Electrons with Semiconductors* Energy Bookkeeping Important energy loss mechanisms accounted for by defining effective e-h pair creation energy: E=Eg+Ek+ER E= 8.4eV for 4H SiC- energy independent Backscattering losses accounted for by subtracting percentage η from incident electron energy E0 Carrier multiplication achieved (1-η)E0/E Beta-voltaic Operation Prediction for Mature MaterialsOpen Circuit Voltage Tritium 1 Prediction for Mature MaterialsEfficiency Tritium 1 Prediction for Mature MaterialsPower Density Tritium Why SiC ? Property Band gap (eV) Breakdown field for 1017cm-3 (MV/cm) Saturated Electron Drift (cm/s) Electron mobility (cm2/Vs) Hole mobility (cm2/Vs) Thermal Conductivity (W/cmK) 4H SiC as Cell Material 4H SiC is ideal material owing to its large bandgap (3.3eV) Low realizable leakage current-substrates 4H SiC is extremely radiation hard Low Z-elements Minimal loss from backscattering. Significant progress in SiC radiation detectors with charge collection efficiencies (CCE) close to 100%. Betavoltaic Cell Design Considerations Absorption depth of electrons Bethe range ~E01.6 = 3μm@17keV Determines junction width and depth Backscat