AFM／SCM及LBIC技术在平面型保护环结构.docxVIP

第29卷第6期红外与毫米波学报2010年12月J．Infrared Millim．Waves文章编号：1001—9014(2010)06—0401一05V01．29，No．6·December，2010OPTIMUM GUARD．RING FOR PLANARInP／InGaAs PHOTODIODE：CHARACTERIZEDWITH AFM．SCMandLBICLI Yong。Ful’2”，TANG Heng．Jin91”，ZHU Yao．Min912”，LI Ta012”，YIN Ha03，LI Tian．Xin3．LI Xuel t一。GONG Hai．Meil·2’(1．State Key Laboratoriesof Transducer Technology，Shanghai Institute of TechnicalPhysics，Chinese Academy of Sciences，Shanghai200083，China；2．Key Laboratory of InfraredImagingMateriaLs andDetectors，ShanghaiInstitute of TechnicalPhysics，Chinese Academy ofSciences，Shanghai200083，China；3．National Laboratory for InfraredPhysics，Shanghai Institute of TechnicalPhysics，Chinese Academy ofSciences，Shanghai 200083，China； 4．Graduate School of Chinese AcademyofSciences，Beijing 100039，China)Abstract：To study theguard·ringsuppressioneffectonthe extension of thephoto-sensitive目u黜in planar—type front illumi-nated InP／InGaAs hetero-structure detector，the lnGaAs photo detectors with different distances between guard·ring and PN junction were designedand fabricated．The actual distance between guard·ring and PN junction of the detector was calculat· ed based on the atomic force microscopy(AFM)and scanningcapacitancemicroscopy(SCM)me船urements．Thecharae-teristics of the photo response of the detectors with guard-ringwerecarriedoutwith laser beam induced current(LBIC) method．It Was indicated that LBIC signal of the photo detector without guard-ring fit well with the exponential decay func— tion，while that of detector with guard—ring followed the Gaussian distribution．Theextension value of the photo-sensitive ar-ea decreasedlinearly as the distancebetweentheguard—ringand PNjunctiondecreased．It Was concluded that theappropri-ategapbetween theguard-ringandPN junctionshould be in therangeof 7to121LLm．Keywords：scanningcapacitancemicroscopy(SCM)；laser beam inducedcurrent(LBIC)；photo-carrierdiffusion；删·ring；lnWlnGaAsCLC llUnlbet：TN2Document：AAFM／SCM及LBIC技术在平面型保护环结构InGaAs探测器设计中的应用李永富1’2’4，唐恒敬1”，朱耀明