SiliconOpticalModulators(硅基光调制器)解析.ppt

Silicon Optical Modulators Recent developments in fabrication of High Speed Modulators J ee290f Outline Motivation Png, Reed, et al. work from Surrey. Shows basic principle and gives one of the two major design types Intel device History making device, designed and fabricated in alternate major design type. Conclusions Motivation Very clear: Si modulators means CMOS integration and using all our experience in silicon micromachining. Unfortunately, prior to 2003 the fastest Si optical modulator was ~20MHz (Lithium Niobate modulators are ~10GHz). p-i-n Si Optical Modulators 1/4 Follows the work presented by Png, Reed, et al from Surrey University (UK). p-i-n Si Optical Modulators 2/4 p-i-n Si Optical Modulators 3/4 p-i-n Si Optical Modulators 4/4 Simulation results show modulation can be optimized to 1.3GHz and a 180? at .7 mA of current. However, performance is very dependant on doping profile and a critical dimensions are not very tolerant. As of late 2003, fabrication is underway. MOS Si Optical Modulators 1/4 Still uses the plasma dispersion effect, but implements a MOS capacitor to induce change in free carrier density instead of a p-i-n device. MOS Si Optical Modulators 2/4 Apply VD to poly. Charge accumulation on both sides of gate oxide. ?Ne = ?Nh = [?/etoxt]*(VD – VFB) ?ne = -8.8 x 10-22?Ne ?nh = -8.5 x 10-18(?Nh)0.8 ?? = (2?/?)?neffL MOS Si Optical Modulators 3/4 MOS Si Optical Modulators 4/4 Conclusion MOS modulator has poor loss figures and still an order of magnitude slower than commercial modulators. Intel argues these can both be theoretically fixed by decreasing the size of the device and using Si in the guide region instead of poly (still integrable?). P-i-n modulator is still being fabricated and depends on its optimal design for the high values achieved, so potentially success or failure from fabrication runs. * * VD is applied to Anode vs. Cathode. → forward biased p-i-n junction. → e and holes injected into guiding region → changes refra