1- the universityof texasat arlington(1 - texasat大学阿灵顿)(20页).docVIP

1- the universityof texasat arlington(1 - texasat大学阿灵顿)(20页).doc

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Electromigration Analysis for MTTF calculations Mahesh N. Jagadeesan, Analog IC Research Group, The University of Texas at Arlington jmaheshn@, October, 2002 1. Introduction Electromigration is caused by high current density stress in metallization patterns and is a major source of breakdown in electronic devices. It is therefore an important reliability issue to verify current densities within all stressed metallization patterns. Both electromigration and joule heating are used in self consistent solutions for maximum allowed interconnect peak current density. The maximum allowed temperature and current density solutions monotonically increase as duty cycle r decreases [1]. With the help of the layout parameters the peak current density is calculated and analyzed with the estimated values obtained from various interconnect nodes of the circuit. Using these analyses, peak current density solutions can be used to generate adequately safe current density design guidelines. 2. Electromigration Electromigration is the current induced transport of the conducting material. In the presence of high current stresses, electron momentum is transferred to atoms in the conducting material yielding a net atomic flux. This net flux causes conducting material to be depleted “up wind” and accumulated “down wind.” Regions where the interconnect material has been depleted will form a void, leading to interconnect open-circuit failure. Likewise, interconnect material can also accumulate and extrude to make electrical contact with neighboring interconnect segments, potentially leading to circuit failure due to the formation of a short circuit. Either outcome can contribute to the gradual ``wearing out of a current stressed interconnect over time. The formation of voids and accumulations is dependent on the underlying microstructure of the metal film from which the interconnect has been patterned as discussed earlier. Once deposited, the metal film has a distribution of grain

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