Radiation Damage in Silicon Detectors硅探测器的辐射损伤.pptVIP

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Radiation Damage in Silicon Detectors硅探测器的辐射损伤.ppt

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Radiation Damage in Silicon Detectors硅探测器的辐射损伤

Michael MollCERN - Geneva - Switzerland Outline Introduction: LHC and LHC experiment Motivation to develop radiation harder detectors Introduction to the RD50 collaboration Part I: Radiation Damage in Silicon Detectors (A very brief review) Microscopic defects (changes in bulk material) Macroscopic damage (changes in detector properties) Part II: RD50 - Approaches to obtain radiation hard sensors Material Engineering Device Engineering Summary and preliminary conclusion LHC - Large Hadron Collider LHC example: CMS inner tracker Status December 2006 LHC Silicon Trackers close to or under commissioning The CERN RD50 Collaboration http://www.cern.ch/rd50 Collaboration formed in November 2001 Experiment approved as RD50 by CERN in June 2002 Main objective: Outline Motivation to develop radiation harder detectors Introduction to the RD50 collaboration Part I: Radiation Damage in Silicon Detectors (A very brief review) Microscopic defects (changes in bulk material) Macroscopic damage (changes in detector properties) Part II: RD50 - Approaches to obtain radiation hard sensors Material Engineering Device Engineering Summary and preliminary conclusion Radiation Damage – Microscopic Effects Radiation Damage – Microscopic Effects Primary Damage and secondary defect formation Two basic defectsI - Silicon Interstitial V - Vacancy Primary defect generation I, I2 higher order I (?) ? I -CLUSTER (?) V, V2, higher order V (?) ? V -CLUSTER (?) Secondary defect generation Main impurities in silicon: Carbon (Cs) Oxygen (Oi)I+Cs ? Ci ? Ci+Cs ? CiCS Ci+Oi ? CiOi Ci+Ps ? CiPS V+V ? V2 V+V2 ? V3 V+Oi ? VOi ? V+VOi ? V2Oi V+Ps ? VPs I+V2 ? V I+VOi ? Oi Example of defect spectroscopy- neutron irradiated - Impact of Defects on Detector properties Reverse biased abrupt p+-n junction Macroscopic Effects – I. Depletion