【物理】半导体制程简介 .pptVIP

Semiconductor Process Brief Introduction半導體製程簡介 Process definition and flow Wafer process flow Deposition Brief introduction The film of device formation Process definition：Oxidation、Deposition Characteristics：High temperature、high clean level CVD (Chemical Vapor Deposition) Brief Introduction Using chemical method to deposit film in chamber. PVD(Physical Vapor Deposition) Brief Introduction Photo process Introduction Define device and process area flow： PR coating→Expose→PEB→Inspect→alignment→SPEC measurement Implantation Brief Introduction Implant the dosage to device (N-Type，P-Type) to build up the device characteristics we need. Dosage source：P、As(N-Type) 。B(P-Type) Tool： MED-IMP：low dosage and high energy HI-IMP：high dosage and low energy HI-ENERGY：High dosage and high energy. 第 * 頁 第 * 頁 Wet Etch PVD CVD Deposition Dry Etch IMP Photo 濕式蝕刻 物理氣相沉積 沉積 Wafer start laser mark wafer clean SiN/oxide film Oxide Film Poly DEP WSi DEP TEOS DEP BPSG Film Metal Film Passivation PR coating Expose PBE Chemical etch Plasma etch Implant Mask Wafer out Wafer back side process WAT PR remove PBE: Post Exposure Bake Substrate Substrate Substrate Substrate O2(+H2O) SiO2 Oxidation Deposition Substrate Substrate Filter Substrate Target Substrate Deposition PR Substrate Deposition PR PR Substrate Deposition PR PR Deposition Substrate Deposition Deposition mask ETCH Brief introduction Special pattern formation which depend on the pre-layer mask pattern (PHOTO) ETCH type: Dry etch and wet etch. Dry etch: anti-isotropic Wet etch: isotropic isotropic anisotropic Substrate Deposition PR PR Substrate Deposition PR PR Deposition Substrate Deposition Deposition isotropic Anti-isotropic Substrate Deposition PR PR Substrate Deposition PR PR Deposition Substrate Deposition Deposition MED-IMP Hi-IMP PR PR ION PR PR ION Common device process flow Poly film DEP Substrate Deposition PR Substrate Deposition Substrate Deposition PR Substrate PR Dep PR Coating Expose + PEB ETCH substr