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Reprint of Palladium Ohmic contact on hydrogen-terminated single crystal diamond film.pdf

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Reprint of Palladium Ohmic contact on hydrogen-terminated single crystal diamond film.pdf

Diamond Related Materials 63 (2016) 175–179 Contents lists available at ScienceDirect Diamond Related Materials journal homepage: /locate/diamond Reprint of Palladium Ohmic contact on hydrogen-terminated single crystal diamond ?lm☆ W. Wang, C. Hu, F.N. Li, S.Y. Li, Z.C. Liu, F. Wang, J. Fu, H.X. Wang ? Key Laboratory for Physical Electronics and Devices of the Ministry of Education, The School of Electronic and Information Engineering, Xian Jiaotong University, Xian, Shaanxi 710049, China article info Article history: Received 15 July 2015 Received in revised form 21 September 2015 Accepted 21 September 2015 Available online 5 February 2016 Keywords: Palladium Ohmic contact Speci?c contact resistance XPS Annealing Surface treatment abstract Contact properties of Palladium (Pd) on the surface of hydrogen-terminated single crystal diamond were investigated with several treatment conditions. 150 nm Pd pad was deposited on diamond surface by thermal evaporation technique, which shows good Ohmic properties with the speci?c contact resistivity (ρc) of 1.8 × 10?6 Ω cm2 evaluated by Transmission Line Model. To identify the thermal stability, the sample was annealed in Ar ambient from 300 to 700 °C for 3 min at each temperature. As the temperature increased, ρc ?rstly decreased to 4.93 × 10?7 Ω cm2 at 400 °C and then increased. The barrier height was evaluated to be ?0.15 eV and ? 0.03 eV for as-deposited and 700 °C annealed sample by X-ray photoelectron spectroscopy analysis. Several surface treatments were also carried out to determine their effect on ρc, among which HNO3 vapor treated sample indicates a lower value of 5.32 × 10?6 Ω cm2. ? 2015 Elsevier B.V. All rights reserved. 1. Introduction Diamond appears promising for high-power and high-frequency devices, since it has remarkable properties, such as wide band gap (5.47 eV), highest thermal conductivity (22 W/cm K), high breakdown ?eld (N10 MV/cm), high carrier mobility of electron (4500 cm2 V?1 s?1) and hole (3800