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TiNiAu contacts to n-SiC after low energy implantation.pdf
Materials Letters 166 (2016) 39–42
Contents lists available at ScienceDirect
Materials Letters
journal homepage: /locate/matlet
Ti/Ni/Au contacts to n-SiC after low energy implantation
Patrick W Leech a,n, Anthony S Holland a, Geoffrey K Reeves a, Yue Pan a, Mark Ridgway b, Phillip Tanner c
a School of Electrical and Computer Engineering, RMIT University, Melbourne, Australia b Electronic Materials Engineering, Australian National University, Canberra, Australia c Grif?th University, Queensland Microtechnology Facility, Brisbane, Australia
article info
Article history: Received 7 October 2015 Accepted 6 December 2015 Available online 8 December 2015
Keywords: Sic Low energy implantation Ion dose Speci?c contact resistance Ti/Ni/Au
abstract
The effect of low energy implantation of P or C ions in 3 C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013–1015 ions/cm2. Measurements of speci?c contact resistance,
ρc, were performed using the two-contact circular test structure. The magnitude of ρc for the Ti/Ni/Au contacts on unimplanted SiC was 1.29 ? 10à6 Ω cm2. The value of ρc increased signi?cantly at an implant dose of 1 ? 1015 ions/cm2. The dependence of Rsh and ρc on ion dose has been measured using both C and
P implant species. 2015 Elsevier B.V. All rights reserved.
1. Introduction
The semiconductor SiC has shown exceptional properties in devices used in harsh environments such as at elevated temperatures and high power levels. Recent developments in the growth of high quality epitaxial layers of 3 C and 6 H-SiC on Si substrates have enabled the large-scale fabrication of these devices. An important requirement in the realization of power devices on SiC has been the ability to form ohmic contacts with characteristics of low resistivity and high thermally stability. The most commonly used ohmic contacts to n-SiC have consisted of deposition of a layer of metal (Ni, Ti, Co, Pd, Pt [1]) or carbon [2] followed by annealing at $ 1
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