wet and dry etching.pptVIP

Plasma Plasma=partially ionised gas consisting of equal numbers of “+”(ions) and “-” (electrons) charges and a different number of neutral (un-ionised) molecules An ion-electron pair is continuously created by ionisation and destroyed by recombination Typical kinetic energy of an electron in plasma is 2-8eV KE=1/2 mv2 = 3/2 kT 2eV electron has T~15000 K, V=6*107 cm/s Plasma Formation Chamber is evacuated Chamber is filled with gas RF energy is applied to a pair of electrodes Applied energy accelerates electrons increasing kinetic energy Electrons collide with neutral gas molecules, forming ions and more electrons Steady state is reached (plasma); ionisation=recombination Plasma discharge is characterised by central glow or bulk region and dark or sheath regions near electrodes Bulk region=semi-neutral (nearly equal number of electrons and ions) Sheath regions=nearly all of the potential drop; accelerates “+” ions from bulk region which bombard the substrate Maintained at 1 Pa to 750 Pa with gas density of 27*1014 to 2*1017 molecules/cm3 Reactive Ion Etching (RIE) RIE=process in which chemical etching is accompanied by ionic bombardment (ie ion assisted etching) Bombardment opens areas for reactions Ionic Bombardment: No undercutting since sidewalls are not exposed Greatly increased etch rate Structural degradation low selectivity Disadvantages of RIE Conflict between etching rate and anisotropic profile Etching rate (+) --- Reactive species---concentration (+)---- Gas pressure (+)--- Collision (+)---Anisotropic (decreases) Conflict between damage of high etching rate and anisotropic profile KE(+)---Etching rate (+)---damage(+) Dry Etching Products Wet and Dry Etching Unit 2 Wet and Dry Etching By Dr. Ghanshyam Singh Sharda University Etching: Outline Important factors: Uniformity Etch Control Etch Selectivity Wet Etching Physical Mechanism of Wet Etching Etching Methods Immersion wet etching Spray wet etching Silicon wet etching: Isotropic and Anisotropic