第3章节场效应管和其基本电路.pptVIP

模拟电子技术 1. 放大倍数Au ＋ － U o R L R S S D I d g m U gs Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. 2.输入电阻 C 2 C 1 R G1 R S U DD R G2 150k 50k 2k ＋ ＋ R L 10k U o R G3 1M ＋ － ＋ － U i g m ＝2mA/V Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. 图3―20计算共漏电路输出电阻Ro的电路 3. 输出电阻Ro C 2 C 1 R G1 R S U DD R G2 150k 50k 2k ＋ ＋ U o R G3 1M R L 10k ＋ － ＋ － U i g m ＝2mA/V I o Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. 图3―20计算共漏电路输出电阻Ro的等效电路 Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. 作 业 3-1 3-3 3-4 3-5 3-7 3-8 Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. (3)恒流区 ·曲线间隔均匀，uGS对iD控制能力强。 ·uDS对iD的控制能力弱，曲线平坦。 预夹断后所对应的区域。 uGSUGSth uGDUGSth（或uDSuGS-UGSth） Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. 三、转移特性 (1)当uGSUGSth时，iD=0。 (2)当uGSUGSth时，iD 0，二者符合平方律关系。 iD≥0 Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. u G S / V 0 3 2 1 1 2 3 4 5 U GS th i D / mA 图3―7 NMOSFET的转移特性曲线 Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. 3―2―3 N沟道耗尽型 MOSFET (Depletion NMOSFET) ID0表示uGS=0时所对应的漏极电流。 Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. 图 N沟道耗尽型MOS场效应管的沟道形成 B N ＋ 导电沟道（反型层） P 型衬底 N ＋ UGS=0，导电沟道已形成 Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd. 图3―10N沟道耗尽型MOS管的特性及符号(a)转移特性；(b)输出特性；(c)表示符号 Eva