BT139X-600E,127;中文规格书,Datasheet资料.pdfVIP

http:/ 1. Product profile 1.1 General description Passivated, sensitive gate triac in a ‘full pack’ SOT186A (TO-220) plastic package. 1.2 Features and benefits ? High sensitivity in all four quadrants. 1.3 Applications 1.4 Quick reference data 2. Pinning information BT139X-600E Triac; sensitive gate Rev. 4 — 28 October 2011 Product data sheet ? General purpose bidirectional switching ? Phase control. ? VDRM ? 600 V ? IGT ? 10 mA (T2+ G+; T2+ G?; T2? G?) ? IT(RMS) ? 16 A ? IGT ? 25 mA (T2? G+). ? ITSM ? 155 A Table 1. Pinning Pin Description Simplified outline Symbol 1 main terminal 1 (T1) SOT186A (TO-220) 2 main terminal 2 (T2) 3 gate (G) mb isolated 321 mb sym051 T1 G T2// NXP Semiconductors BT139X-600E Triac; sensitive gate http:/3. Ordering information 4. Limiting values [1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/?s. Table 2. Ordering information Type number Package Name Description Version BT139X-600E - plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 ‘full pack’ SOT186A Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDRM repetitive peak off-state voltage [1] - 600 V IT(RMS) RMS on-state current full sine wave; Ths ? 38 ?C - 16 A ITSM non-repetitive peak on-state current full sine wave; Tj = 25 ?C prior to surge t = 20 ms - 155 A t = 16.7 ms - 170 A I2t I2t for fusing t = 10 ms - 120 A2s dIT/dt repetitive rate of rise of on-state current after triggering ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/?s T2+ G+ - 50 A/?s T2+ G? - 50 A/?s T2? G? - 50 A/?s T2? G+ - 10 A/?s IGM peak gate current - 2 A VGM peak gate voltage - 5 V PGM peak gate power - 5 W PG(AV) average gate power over any 20 ms period - 0.5 W Tstg storage temperature ?40 +150 ?C Tj junction temperature - 125 ?CBT139X-600E All in