RTR030N05TL;中文规格书,Datasheet资料.pdf

1/4 ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.04 - Rev.A 2.5V Drive Nch MOSFET RTR030N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). Application Inner circuit Switching Packaging specifications Package Code Taping Basic ordering unit (pieces) RTR030N05 TL 3000 Type Absolute maximum ratings (Ta=25°C) ?1 ?1 ?2 Parameter VVDSS Symbol 45 VVGSS ±12 AID ±3 AIDP ±12 AIS 0.8 AISP 12 WPD 1.0 °CTch 150 °CTstg ?55 to +150 Limits Unit Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Range of Storage temperature Continuous Pulsed Continuous Pulsed ?1 Pw≤10μs, Duty cycle≤1% ?2 When mounted on a ceramic board Source current (Body diode) Thermal resistance °C / WRth (ch-a) 125 Parameter Symbol Limits Unit Channel to ambient ? When mounted on a ceramic board ? Each lead has same dimensions(1) Gate (2) Source (3) Drain TSMT3 0~0.1 0.16 0.85 1.0MAX 0.7 0 .3 ~ 0 .6 (2)(1) (3) 2.9 2 .8 1.9 1 .6 0.950.95 0.4 Abbreviated symbol : PV (1) Gate (2) Source (3) Drain ?1 ESD PROTECTION DIODE ?2 BODY DIODE ?2 ?1 (3) (1) (2) / RTR030N05 Data Sheet 2/4 ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.04 - Rev.A Electrical characteristics (Ta=25°C) Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ?Pulsed Parameter Symbol IGSS Yfs Min. ? ? ±10 μA VGS= ±12V, VDS=0V VDD 25V Typ. Max. Unit Conditions V(BR)DSS 45 ? ? V ID= 1mA, VGS=0V IDSS ? ? 1 μA VDS= 45V, VGS=0V VGS (th) 0.5 ? 1.5 V VDS= 10V, ID= 1mA ? 48 67 ID= 3A, VGS= 4.5V RDS (on) ? 53 74 m? m? m? I