MRF8S7170NR3;中文规格书,Datasheet资料.pdfVIP

MRF8S7170NR3 1 RF Device Data Freescale Semiconductor RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. ? Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 728 MHz 19.7 37.1 6.2 --38.7 748 MHz 19.5 37.0 6.1 --37.5 768 MHz 19.4 37.9 6.1 --37.8 ? Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 170 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness ? Typical Pout @ 1 dB Compression Point? 182 Watts CW Features ? 100% PAR Tested for Guaranteed Output Power Capability ? Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters ? Internally Matched for Ease of Use ? Integrated ESD Protection ? Greater Negative Gate--Source Voltage Range for Improved Class C Operation ? Designed for Digital Predistortion Error Correction Systems ? 225°C Capable Plastic Package ? RoHS Compliant ? In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +70 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 80°C, 170 W CW, 28 Vdc, IDQ = 1200 mA Case Temperature 81°C, 50 W CW, 28 Vdc, IDQ = 1200 mA RθJC 0.30 0.37 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at /rf. Select Software Tools/