UD4803技术稳定datasheet.pdf

1 UD4803 N-Ch and P-Ch Fast Switching MOSFETs Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage ±20 ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 23 -20 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 18 -16 A IDM Pulsed Drain Current2 46 -40 A EAS Single Pulse Avalanche Energy3 28 66 mJ IAS Avalanche Current 17.8 -27.2 A PD@TC=25℃ Total Power Dissipation4 25 31.3 W TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 62 ℃/W RθJC Thermal Resistance Junction-Case1 --- 5 ℃/W BVDSS RDSON ID 40V 26m? 23A -40V 40m? -20A The UD4803 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UD4803 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available General Description Features Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System CCFL Back-light Inverter Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summery 2 UD4803 N-Ch and P-Ch Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.034 --- V/℃ VGS=10V , ID=12A --- 22 26 RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V ,