Blue shift of yellow luminescence band in self-ion-implanted n-GaN nanowire.pdf

1 Blue shift of yellow luminescence band in self-ion-implanted n-GaN nanowire S. Dhara,a) A. Datta,b) C. T. Wu, Z. H. Lan, K. H. Chen,* Y. L. Wang Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan C. W. Hsu, L. C. Chen Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan H. M. Lin, C. C. Chen Department of Chemistry, National Taiwan Normal University, Taipei, Taiwan Y. F. Chen Department of Physics, National Taiwan University, Taipei, Taiwan Abstract Optical photoluminescence studies are performed in self- ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50-keV Ga+ focused ion beam (FIB) in the fluence range of 1x1014 - 2x1016 ions cm-2 is used for the irradiation process. A blueshift is observed for the yellow luminescence (YL) band with increasing fluence. Donor-acceptor pair (DAP) model with emission involving shallow donor introduced by point-defect clusters related to nitrogen vacancies and probable deep acceptor created by gallium interstitia l clusters is made responsible for the shift. High temperature annealing in nitrogen ambient restores the peak position of YL band by removing nitrogen vacancies. * Corresponding Author : chenkh@po.iams.sinica.edu.tw a) The author is presently on leave from Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam–603102, India b) Now at Netaji Nagar Day College,170/436 N.S.C Bose Road, Kolkata-700092, WB, India 2 Extensive studies1-8 are performed in understanding various defects present in n- and p- GaN film as defects play an important role in optical and electrical properties of semiconductors for the device fabrication. In the photoluminescence (PL) studies, yellow luminescence (YL) band around 2.2 eV (band width ~1 eV) is one of the most well discussed defect bands present in GaN film with either native point-defects3-5 or point-defects nucleating at extended defects like dislocations6 as the orig