Analysis of Reverse-Bias Leakage Current Mechanisms in MetalGaN Schottky Diodes英文文献资料.docVIP

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Analysis of Reverse-Bias Leakage Current Mechanisms in MetalGaN Schottky Diodes英文文献资料.doc

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Analysis of Reverse-Bias Leakage Current Mechanisms in MetalGaN Schottky Diodes英文文献资料

HindawiPublishingCorporation AdvancesinCondensedMatterPhysics Volume2010,ArticleID526929,7pages doi:10.1155/2010/526929 ResearchArticle AnalysisofReverse-BiasLeakageCurrentMechanismsin Metal/GaNSchottkyDiodes P.PipinysandV.Lapeika DepartmentofPhysics,VilniusPedagogicalUniversity,08106Vilnius,Lithuania CorrespondenceshouldbeaddressedtoV.Lapeika,vytautas.lapeika@vpu.lt Received13May2010;Accepted28July2010 AcademicEditor:J¨orgFink Copyright?2010P.PipinysandV.Lapeika.ThisisanopenaccessarticledistributedundertheCreativeCommonsAttribution License,whichpermitsunrestricteduse,distribution,andreproductioninanymedium,providedtheoriginalworkisproperly cited. Temperature-dependentreverse-biascurrent-voltagecharacteristicsobtainedbyotherresearchersforSchottkydiodesfabricated onGaNarereinterpretedintermsofphonon-assistedtunneling(PhAT)model.Temperaturedependenceofreverse-biasleakage currentisshowncouldbecausedbythetemperaturedependenceofelectrontunnelingratefromtrapsinthemetal-semiconductor interface to the conduction band of semiconductor. A good ?t of experimental data with the theory is received in a wide temperaturerange(from80Kto500K)usingforcalculationthee?ectivemassof0.222me.andforthephononenergythevalue of70meV.Thetemperatureandbiasvoltagesdependencesofanapparentbarrierheight(activationenergy)arealsoexplicablein theframeworkofthePhATmodel. 1.Introduction hoppingconduction.However,forthe?ttingoftheexperi- mentaldatawiththetunnelingcurrentmodel,theauthors [3] have used unphysically low the e?ective mass (9.8 × GaN is a wide direct band gap semiconductor which has uniqueapplicationsinthefabricationofbluelight-emitting diodes, lasers, ultraviolet detectors, ?eld e?ect transistors, andhighpowerrecti?ers[1,2].Metal-semiconductorcon- tactisoneofthemostwidelyusedrectifyingcontactsinthe electronicsindustry.However,GaN-basedSchottkycontacts su?er from abnormal leakage currents under reverse bias, whichisonefactorpresentlylimitingdeviceperformance. Duetothetechnologicalimportance