Angular Distribution of Damping Coefficient of Ablated Particle in Pure He, Ne, and Ar Gases英文文献资料.docVIP

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Angular Distribution of Damping Coefficient of Ablated Particle in Pure He, Ne, and Ar Gases英文文献资料.doc

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Angular Distribution of Damping Coefficient of Ablated Particle in Pure He, Ne, and Ar Gases英文文献资料

HindawiPublishingCorporation JournalofNanomaterials Volume2011,ArticleID279686,7pages doi:10.1155/2011/279686 ResearchArticle AngularDistributionofDampingCoef?cientof AblatedParticleinPureHe,Ne,andArGases YinglongWang,XiaolinZhai,XuechengDing,ZiqiangHu,LizhiChu, ZechaoDeng,WeihuaLiang,YajunZhao,andGuangshengFu CollegeofPhysicsScienceandTechnology,HebeiUniversity,Baoding071002,Hebei,China CorrespondenceshouldbeaddressedtoYinglongWang,hdwangyl@ Received5June2011;Revised26July2011;Accepted26July2011 AcademicEditor:GongRuLin Copyright?2011YinglongWangetal.ThisisanopenaccessarticledistributedundertheCreativeCommonsAttributionLicense, whichpermitsunrestricteduse,distribution,andreproductioninanymedium,providedtheoriginalworkisproperlycited. Toinvestigatetheangulardistributionofdampingcoe?cientofablatedparticleundervariousambientgases,nanocrystalline silicon?lmsaresystemicallydepositedonacircularsubstratebypulselaserablationinpureHe,Ne,andArgases,respectively. ScanningelectronmicroscopyimagesandRamanandX-raydi?ractionspectraindicatethattheaveragesizeofSinanoparticles decreaseswiththeincreaseofthedepartureanglebetweenthe?lmandtheplume,andNegasinducesthesmallestandmost uniformSinanoparticlesinsizeamongallthethreegases.Furthertheoreticalsimulationdemonstratesthebiggerthedeparture angle,thesmallerthedampingcoe?cientofablatedparticle,andthedampingcoe?cientinNegasislargestforthesameangle, implyingthemoste?ectiveenergytransferbetweenSiandambientatoms. 1.Introduction collisionsbetweenSiatomsandambientgasarecrucial.An inertia?uidmodelcanconsistentlyexplaintheexperimental resultsondependenceonthesizeofnp-SisHepressure[19]. Thismodelindicatesthatthedragforce(f)oftheablated particleisproportionaltothesquareofvelocity(v ),namely, There is a signi?cant growing interest in nanocrystalline silicon(nc-Si)thin?lms[1–3]containingalotofSinanopar- ticles (np-Sis) for their potential applications in optoelec- tronic integration and high-e?ciency solar cell [4–7]. In these applications, the co