Anisotropic Ferro- and Dielectric Properties of Textured Bi4Ti3O12 Ceramics Prepared by the Solid-State Reaction Based on Multiple Calcination英文文献资料.docVIP

Anisotropic Ferro- and Dielectric Properties of Textured Bi4Ti3O12 Ceramics Prepared by the Solid-State Reaction Based on Multiple Calcination英文文献资料.doc

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Anisotropic Ferro- and Dielectric Properties of Textured Bi4Ti3O12 Ceramics Prepared by the Solid-State Reaction Based on Multiple Calcination英文文献资料

HindawiPublishingCorporation AdvancesinMaterialsScienceandEngineering Volume2010,ArticleID398590,6pages doi:10.1155/2010/398590 ResearchArticle AnisotropicFerro-andDielectricPropertiesof TexturedBi4Ti3O12CeramicsPreparedbytheSolid-StateReaction BasedonMultipleCalcination XiangyuMao,WeiWang,HuiSun,andXiaobingChen CollegeofPhysicsScienceandTechnology,YangzhouUniversity,Yangzhou225002,China CorrespondenceshouldbeaddressedtoXiaobingChen,xbchen@ Received3July2010;Revised22September2010;Accepted13October2010 AcademicEditor:Z.H.Barber Copyright?2010XiangyuMaoetal.ThisisanopenaccessarticledistributedundertheCreativeCommonsAttributionLicense, whichpermitsunrestricteduse,distribution,andreproductioninanymedium,providedtheoriginalworkisproperlycited. Thegrain-orientedBi4Ti3O12 (BIT)sampleswerepreparedbythesolid-statereactionmethodwithamulticalcinationprocess. Thegrain-orientedBITsamplesexhibitanisotropicstructural,ferroelectric,piezoelectric,anddielectricproperties.Theremanent polarization(2Pr)andthepiezoelectricconstant(d33)ofa/b-andc-directionBITceramicsare49.5μCcm?2,22.2pCN?1 and 6.7μCcm?2 6.9pCN?1,respectively.Thedielectricanomaliesofsamplesareobservedaround157Kand232K.Thedielectric anomaliesataround157Karerelatedtooxygenvacancies.Theactivationenergyofthedielectricrelaxationofthisanomalyis estimatedtobe1.36eV.Anotherdielectricanomalyataround232Kisrelatedtopolarizabledomainsandtheviscousmotionof domainwalls. 1.Introduction havinggrainorientationortexturedmicrostructuresbecause improved properties can be achieved in grain-oriented ceramics more than that have a random-oriented grain structure [9–11]. Mechanical force is normally applied to preparegrain-oriented ceramics,thatis, hot-forging (HF), hot-pressing(HP),templatedgraingrowth(TGG),andtape- castingprocesses(TCPs). The dielectric properties of ferroelectric materials are closely related to crystal structure and oxygen vacancies, whichcanbecontrolledbydopingorannealingindi?erent oxygenpartialpressureconditions.Aftert

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