Anisotropic Ferro- and Dielectric Properties of Textured Bi4Ti3O12 Ceramics Prepared by the Solid-State Reaction Based on Multiple Calcination英文文献资料.docVIP
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Anisotropic Ferro- and Dielectric Properties of Textured Bi4Ti3O12 Ceramics Prepared by the Solid-State Reaction Based on Multiple Calcination英文文献资料
HindawiPublishingCorporation
AdvancesinMaterialsScienceandEngineering
Volume2010,ArticleID398590,6pages
doi:10.1155/2010/398590
ResearchArticle
AnisotropicFerro-andDielectricPropertiesof
TexturedBi4Ti3O12CeramicsPreparedbytheSolid-StateReaction
BasedonMultipleCalcination
XiangyuMao,WeiWang,HuiSun,andXiaobingChen
CollegeofPhysicsScienceandTechnology,YangzhouUniversity,Yangzhou225002,China
CorrespondenceshouldbeaddressedtoXiaobingChen,xbchen@
Received3July2010;Revised22September2010;Accepted13October2010
AcademicEditor:Z.H.Barber
Copyright?2010XiangyuMaoetal.ThisisanopenaccessarticledistributedundertheCreativeCommonsAttributionLicense,
whichpermitsunrestricteduse,distribution,andreproductioninanymedium,providedtheoriginalworkisproperlycited.
Thegrain-orientedBi4Ti3O12 (BIT)sampleswerepreparedbythesolid-statereactionmethodwithamulticalcinationprocess.
Thegrain-orientedBITsamplesexhibitanisotropicstructural,ferroelectric,piezoelectric,anddielectricproperties.Theremanent
polarization(2Pr)andthepiezoelectricconstant(d33)ofa/b-andc-directionBITceramicsare49.5μCcm?2,22.2pCN?1
and
6.7μCcm?2 6.9pCN?1,respectively.Thedielectricanomaliesofsamplesareobservedaround157Kand232K.Thedielectric
anomaliesataround157Karerelatedtooxygenvacancies.Theactivationenergyofthedielectricrelaxationofthisanomalyis
estimatedtobe1.36eV.Anotherdielectricanomalyataround232Kisrelatedtopolarizabledomainsandtheviscousmotionof
domainwalls.
1.Introduction
havinggrainorientationortexturedmicrostructuresbecause
improved properties can be achieved in grain-oriented
ceramics more than that have a random-oriented grain
structure [9–11]. Mechanical force is normally applied to
preparegrain-oriented ceramics,thatis, hot-forging (HF),
hot-pressing(HP),templatedgraingrowth(TGG),andtape-
castingprocesses(TCPs).
The dielectric properties of ferroelectric materials are
closely related to crystal structure and oxygen vacancies,
whichcanbecontrolledbydopingorannealingindi?erent
oxygenpartialpressureconditions.Aftert
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