Semiconducting Polymer Photodetectors with Electron and Hole Blocking Layers High Detectivity in the Near-Infrared 英文参考文献.docVIP

Sensors 2010, 10, 6488-6496; doi:10.3390/s100706488 OPEN ACCESS sensors ISSN 1424-8220 /journal/sensors Article Semiconducting Polymer Photodetectors with Electron and Hole Blocking Layers: High Detectivity in the Near-Infrared Xiong Gong 1,*, Ming-Hong Tong 1, Sung Heum Park 1, Michelle Liu 2, Alex Jen 2 and Alan J. Heeger 1,* 1 Center for Polymers and Organic Solids, University of California Santa Barbara, Santa Barbara, CA 93106-5090, USA; E-Mails: minghong@ (M.-H.T.); shpark@ (S.H.P.) 2 Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195-4330, USA; E-Mails: shiliu@ (M.L.); ajen@ (A.J.) * Author to whom correspondence should be addressed; E-Mails: xgong@ (X.G.); ajhe@ (A.J.H.). Received: 22 April 2010; in revised form: 11 May 2010 / Accepted: 30 June 2010 / Published: 1 July 2010 Abstract: Sensing from the ultraviolet-visible to the infrared is critical for a variety of industrial and scientific applications. Photodetectors with broad spectral response, from 300 nm to 1,100 nm, were fabricated using a narrow-band gap semiconducting polymer blended with a fullerene derivative. By using both an electron-blocking layer and a hole-blocking layer, the polymer photodetectors, operating at room temperature, exhibited calculated detectivities greater than 1013 cm Hz1/2/W over entire spectral range with linear dynamic range approximately 130 dB. The performance is comparable to or even better than Si photodetectors. Keywords: semiconducting polymer; photodetectors; blocking layers; detectivity 1. Introduction Sensing from the ultraviolet (UV)-visible to the infrared is critical for a variety of industrial and scientific applications, including image sensing, communications, environmental monitoring, remote control, day- and night-time surveillance and chemical/biological sensing [1-3]. Today, separate  Sensors 2010, 10